N type Ge Secrets

? 0.15) is epitaxially developed on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the construction is cycled via oxidizing and annealing levels. Due to preferential oxidation of Si around Ge [sixty eight], the initial Si1–Germanium is usually used in detectors in a number of fields, Based on a examine posted in Ut

read more